Specification 156x156 mm Mono-crystalline Silicon Wafer Crystal Growth method:CZ Crystal Orientation:<100> ± 3 ;degree Conductivity Type:P Dopant:Boron Resistivity:0.5 ~ 3.0Ω – cm Life Time:> 10Μs;Ingot level Oxygen Contents:~ 1 xE18 at/cm3;ASTM F121-83 Carbon Contents:< 1 xE17 at/cm3 Diameter:200 ± 0.5mm Square length:156 ± 0.5mm Chard Length:125.2 ± 1.5mm Thickness:200 ± 20μm;Center Point TTV:<= 40μm Warp:<= 100μm;De-Stressed Edge Chips:<0.5mm;Length<1.5mm; (Max 2 ea/w) Front Surface:As wire-saw Back Surface:As wire-saw Appearance:Free of cracks, craw feet, foreign material; Saw mark depth < 40 um; Edge defects,<=1 pcs , not longer than 1.5mm , not deeper than 0.5mm Back Surface:Shrink wrap ; per 100 wafers Back Surface:Angle between square sides : 90 deg. +/-18'.B GradeB Grade (with surface defects Saw marks)
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